Review of First Principles Simulations of STO/BTO, STO/PTO, and SZO/PZO (001) Heterostructures

نویسندگان

چکیده

In this study, we review our first-principles simulations for STO/BTO, STO/PTO, and SZO/PZO (001) heterostructures. Specifically, report ab initio B3PW calculations interfaces, considering non-stoichiometric heterostructures in the process. Our demonstrate that charge redistribution interface region only subtly affects electronic structures. However, changes stoichiometry result significant shifts band edges. The computed gaps interfaces are primarily determined according to whether topmost layer of augmented film has an AO or BO2 termination. We predict increase covalency B-O bonds near as compared BTO, PTO, PZO bulk materials.

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ژورنال

عنوان ژورنال: Crystals

سال: 2023

ISSN: ['2073-4352']

DOI: https://doi.org/10.3390/cryst13050799